2N5771 Datasheet, PDF (4/4 Pages) Fairchild Semiconductor – PNP Switching Transistor

NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_CEO
Collector Cutoff Current
I_CBO
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
I_C = 10 mA, I_B = 0
I_C = 100 µA, I_E = 0
IE = 10 µA, IC = 0
V_CE = 25 V, I_B = 0
V_CB = 30 V, I_E = 0
V_EB = 10 V, I_C = 0
ON CHARACTERISTICS
h_FE
DC Current Gain*
VCE(sat)
V_BE(sat)
V_BE(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I_C = 10 mA, V_CE = 5.0 V
I_C = 100 mA, V_CE = 5.0 V
I_C = 500 mA, V_CE = 5.0 V
I_C = 50 mA, I_B = 0.5 mA
I_C = 500 mA, I_B = 0.5 mA
I_C = 500 mA, I_B = 0.5 mA
IC = 50 mA, VCE = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
C_obo
Output Capacitance
C_ibo
Input Capcitance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V_CB = 10 V, I_E = 0,
f = 1.0 MHz
VBE = 1.0 V, IC = 0,
f = 1.0 MHz
40
V
40
V
12
V
1.0
µA
50
nA
50
nA
10,000 100,000
20,000 200,000
14,000 140,000
1.2
V
1.5
V
2.0
V
1.75
V
7.0
pF
15
pF