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| 2N5771 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – PNP Switching Transistor | |||
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PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
Collector-Emitter Breakdown Voltage* IC = 3.0 mA, IB = 0
15
Collector-Emitter Breakdown Voltage IC = 100 µA, VBE = 0
15
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
15
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
4.5
Collector Cutoff Current
VCB = 8.0 V, IE = 0
Collector Cutoff Current
Emitter Cutoff Current
VCE = 8.0 V, VBE = 0
VCE = 8.0 V, VBE = 0, TA= 125°C
VEB = 4.5 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 0.5 V
IC = 10 mA, VCE = 0.3 V
IC = 10mA,VCE = 0.3V,TA = -55°C
IC = 50 mA, VCE = 1.0 V
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
35
50
20
40
0.75
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0,
f = 140 kHz
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0,
f = 140 kHz
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
8.5
f = 100 MHz
SWITCHING CHARACTERISTICS
ts
Storage Time
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
IC = 10 mA, VCC = 1.5 V,
IB = 1.0 mA
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
10
10
5.0
1.0
120
0.15
0.18
0.6
0.8
0.95
1.5
3.0
3.5
20
15
20
V
V
V
V
nA
nA
µA
µA
V
V
V
V
V
V
pF
pF
MHz
ns
ns
ns
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