TIP41_08 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

Typical Characteristics
1000
100
VCE = 4V
10
1
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
100
IC(MAX) (PULSE)
10
IC(MAX) (DC)
1
0.1
1
TIP41 VCEO MAX.
TIP41A VCEO MAX.
TIP41B VCEO MAX.
TIP41C VCEO MAX.
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
10000
1000
VBE(sat)
IC/IB = 10
100
VCE(sat)
10
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 4. Power Derating
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
3
www.fairchildsemi.com