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| TIP41_08 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor | |||
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
IC = 30mA, IB = 0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current
: TIP41/41A
: TIP41B/41C
Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300ms, Duty Cycleâ¤2%
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
VEB = 5V, IC = 0
VCE = 4V,IC = 0.3A
VCE = 4V, IC = 3A
IC = 6A, IB = 600mA
VCE = 4V, IC = 6A
VCE = 10V, IC = 500mA, f = 1MHz
Min. Max. Units
40
V
60
V
80
V
100
V
0.7 mA
0.7 mA
400
μA
400
μA
400
μA
400
μA
1
mA
30
15
75
1.5
V
2.0
V
3.0
MHz
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
2
www.fairchildsemi.com
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