TIP120_08 Datasheet, PDF (3/5 Pages) STMicroelectronics – Complementary power Darlington transistors

Typical characteristics
10000
VCE = 4V
1000
100
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
f=0.1MHz
100
Cob
Cib
10
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
IC = 250IB
VBE(sat)
VCE(sat)
1
10
IC[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
500_m^1s00_ms
1m
s
5m
DC
s
1
0.1
0.01
1
TIP120
TIP121
TIP122
10
100
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
3
www.fairchildsemi.com