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| TIP120_08 Datasheet, PDF (2/5 Pages) STMicroelectronics – Complementary power Darlington transistors | |||
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Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
IC = 100mA, IB = 0
ICEO
ICBO
IEBO
hFE
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Emitter Cut-off Current
* DC Current Gain
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(on)
Cob
* Base-Emitter On Voltage
Output Capacitance
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VBE = 5V, IC = 0
VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 3V, IC = 3A
VCB = 10V, IE = 0, f =
0.1MHz
Min. Typ. Max. Units
60
V
80
V
100
V
0.5
mA
0.5
mA
0.5
mA
1000
1000
0.2
mA
0.2
mA
0.2
mA
2
mA
2.0
V
4.0
V
2.5
V
200
pF
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
2
www.fairchildsemi.com
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