TIP105TU Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Darlington Transistor

Typical Characteristics
-5
I = -1000mA
B
I = -900mA
-4
B
-3
I = -800mA
B
I = -700mA
B
I = -600mA
B
I = -500mA
B
I = -400mA
B
-2
I = -300mA
B
-1
I = -200mA
B
-0
-0
-1
-2
-3
-4
-5
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-100k
-10k
IC = 500 IB
VBE(sat)
-1k
VCE(sat)
-100
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
1ms
-10
DC
-1
-0.1
-0.01
-0.1
TIP105
TIP106
TIP107
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
10k
VCE = -4V
1k
100
-0.1
-1
-10
Ic[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10k
f = 0.1 MHz
IE = 0
1k
100
10
1
-0.1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
© 2007 Fairchild Semiconductor Corporation
TIP105/TIP106/TIP107 Rev. 1.0.0
3
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