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| TIP105TU Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Darlington Transistor | |||
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Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP105
: TIP106
: TIP107
IC = -30mA, IB = 0
ICEO
ICBO
IEBO
hFE
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
Collector Cut-off Current
: TIP105
: TIP106
: TIP107
Emitter Cut-off Current
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Cob
Base-Emitter On Voltage
Output Capacitance
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0
VBE= -5V, IC = 0
VCE = -4V, IC = -3A
VCE = -4V, IC = -8A
IC = -3A, IB = -6mA
IC = -8A, IB = -80mA
VCE = -4V, IC = -8A
VCB = -10V, IE = 0, f =
0.1MHz
Min. Typ. Max. Units
-60
V
-80
V
-100
V
-50
mA
-50
mA
-50
mA
1000
200
-50
mA
-50
mA
-50
mA
-2
mA
20000
-2
V
-2.5
V
-2.8
V
300
pF
© 2007 Fairchild Semiconductor Corporation
TIP105/TIP106/TIP107 Rev. 1.0.0
2
www.fairchildsemi.com
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