SSM1N45B Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 450V N-Channel MOSFET

Typical Characteristics
Top : 15.V0^GV^S
10.0 V
8.0 V
6.0 V
5.5 V
10⁰
Bottom :
5.0 V
4.5 V
10^-1
10^-1
※ Notes :
1. 250µ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
12
10
8
V_GS = 10V
V_GS = 20V
6
4
2
※ Note : T_J = 25℃
0
0
1
2
3
4
5
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
400
CCC^{iorssssss===CCCggdsds++CCggdd(Cds = shorted)}
300
C_iss
200
C_oss
100
C_rss
※ Note ;
1.
2.
fV=^GS1=M0HVz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
10⁰
150℃
25℃
-55℃
10^-1 ₂
※ Notes :
1.
2.
V25_{DS0µ=s50PVulse}
Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^G0^Sµ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 90V
10
V_DS = 225V
8
V_DS = 360V
6
4
2
※ Note : I_D =0.5 A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2004