SSM1N45B Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 450V N-Channel MOSFET

Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 µA
450 --
∆BV_{DSS Breakdown Voltage Temperature}
/ ∆T_J Coefficient
I_D = 250 µA, Referenced to 25°C --
0.5
I_DSS
Zero Gate Voltage Drain Current
V_DS = 450 V, V_GS = 0 V
V_DS = 360 V, T_C = 125°C
--
--
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 50 V, V_DS = 0 V
--
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -50 V, V_DS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on)
g_FS
Static Drain-Source
On-Resistance
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 250 mA
2.3 3.0
3.7
V
3.5 4.2
4.9
V
V_GS = 10 V, I_D = 0.25 A
-- 3.4 4.25
Ω
V_DS = 50 V, I_D = 0.25 A (Note 4) --
0.7
--
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 185 240
pF
--
29
40
pF
-- 6.5 8.5
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 225 V, I_D = 0.5 A,
R_G = 25 Ω
-- 7.5
25
ns
--
21
50
ns
--
23
55
ns
(Note 4,5)
--
36
80
ns
V_DS = 360 V, I_D = 0.5 A,
--
6.5
8.5
nC
V_GS = 10 V
-- 0.9
--
nC
(Note 4,5)
--
3.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
--
--
0.5
A
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
4.0
A
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 0.5 A
--
--
1.4
V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 0.5 A,
-- 102
--
ns
dI_F / dt = 100 A/µs
(Note 4) _--
0.26
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 75mH, I_AS = 1.6A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
3. I_SD ≤ 0.5A, di/dt ≤ 300A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6.
a)
b)
Reference point of
When mounted on
the
the
Rm_{θinJiLmisumthepaddrasinizeleraedcommended}
(PCB
Mount)
(R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance. R_θCA is determined by the user’s board design)
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004