SI4542DY Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – 30V Complementary PowerTrench MOSFET

Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
Q1
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
Q2
1.3 A
–1.3
0.7 1.2 V
–0.7 –1.2
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in² pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in²
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si4542DY Rev A