SI4542DY Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – 30V Complementary PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 6 A
VGS = 10 V, ID = 6 A, TJ = 125°C
VGS = 4.5 V, ID = 5 A
VGS = –10 V, ID = –6 A
VGS = –10 V, ID = –6 A, TJ = 125°C
VGS = –4.5 V, ID = –5 A
VGS = 10 V, VDS = 5 V
VGS = –10 V, VDS = –5 V
VDS = 15 V, ID = 6 A
VDS = –10 V, ID = –6 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Q1
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
Type Min Typ Max Units
Q1
30
V
Q2 –30
Q1
23
mV/°C
Q2
–21
Q1
1
µA
Q2
–1
Q1
+100 nA
Q2
+100
Q1
1 1.5 3
V
Q2
–1 –1.7 –3
Q1
–4
mV/°C
Q2
4
Q1
19 28 mΩ
32 48
25 35
Q2
21 32
29 51
30 45
Q1
20
A
Q2 –20
Q1
18
S
Q2
16
Q1
830
pF
Q2
1540
Q1
185
pF
Q2
400
Q1
80
pF
Q2
170
Electrical Characteristics (continued)
T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
Q1
Q1
VDS = 15 V, ID = 1 A,
Q2
tr
Turn-On Rise Time
VGS = 10V, RGEN = 6 Ω
Q1
Q2
td(off)
Turn-Off Delay Time
Q2
Q1
VDS = –15 V, ID = –1 A,
Q2
tf
Turn-Off Fall Time
VGS = –10 V, RGEN = 6 Ω
Q1
Q2
Qg
Total Gate Charge
Q1
Q1
VDS = 15 V, ID = 7.5 A, VGS = 5 V
Q2
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q1
Q2
Q2
VDS = –10 V, ID = –6 A, VGS = –5V
Q1
Q2
6
12
ns
13 24
10 18
ns
22 35
18 29
ns
47 75
5
12
ns
18 30
9
13
nC
15 20
2.8
nC
4
3.1
nC
5
Si4542DY Rev A