SGU20N40 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – High input impedance

200
Common Emitter
T = 25℃
C
150
100
50
5.0V
4.5V
4.0V
3.5V
3.0V
V = 2.5V
GE
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Fig 1. Typical Output Characteristics
20
Common Emitter
T = -40℃
C
16
12
8
150A
4
100A
I = 70A
C
0
0
1
2
3
4
5
6
Gate-Emitter Voltage, V_GE [V]
Fig 3. Saturation Voltage vs. V_GE
20
Common Emitter
T = 125℃
C
16
12
8
150A
100A
4
I = 70A
C
0
0
1
2
3
4
5
6
Gate-Emitter Voltage, V_GE [V]
Fig 5. Saturation Voltage vs. V_GE
©2001 Fairchild Semiconductor Corporation
7
Common Emitter
V = 4.5V
GE
6
150A
5
4
100A
3
I = 70A
C
2
-50
0
50
100
150
Case Temperature, T_C [℃]
Fig 2. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25℃
C
16
12
8
150A
4
100A
I = 70A
C
0
0
1
2
3
4
5
6
Gate-Emitter Voltage, V_GE [V]
Fig 4. Saturation Voltage vs. V_GE
10000
Cies
1000
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
100
Coes
Cres
10
0
10
20
30
40
Collector-Emitter Voltage, V_CE [V]
Fig 6. Capacitance Characteristics
SGR20N40L / SGU20N40L Rev. A1