SGU20N40 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High input impedance

SGR20N40L / SGU20N40L
August 2001
IGBT
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
• High input impedance
• High peak current capability (150A)
• Easy gate drive
• Surface Mount : SGR20N40L
• Straight Lead : SGU20N40L
Application
Strobe flash.
C
G E ^D-PAK
G C E ^I-PAK
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_{CM (1)}
P_C
T_J
T_stg
T_L
Description
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T_C = 25°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA (D-PAK)
R_θJA (I-PAK)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) ₍₂₎
Thermal Resistance, Junction-to-Ambient
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
C
G
E
SGR / SGU20N40L
400
±6
150
45
-40 to +150
-40 to +150
300
Typ.
--
--
--
Max.
3.0
50
110
Units
V
V
A
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1