SGS5N150UF Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – General Description

80
70
60
50
40
30
20
10
0
0
20 V
15 V
10 V
Vge=5 V
5
10
15
20
Vce [V]
Fig 1. Typical Output Characteristics
12
Vge = 10V
10
8
6
4
2
0
25
50
75
100
125
150
Tc [℃]
Fig 3. Maximum Collector Current vs.
Case Temperature
10
Vcc = 600V
Load Current : peak of square wave
8
6
4
2
Duty cycle : 50%
Tc = 100 ^oC
Power Dissipation = 12W
0
0.1
1
10
100
Frequency [kHz]
1000
Fig 5. Load Current vs. Frequency
©2003 Fairchild Semiconductor Corporation
Vge=10V
50
40
30
Tc = 25℃
Tc = 100℃
20
10
0
0
4
8
12
16
20
Vce [V]
Fig 2. Typical Output Characteristics
8.0
Vge=10V
7.5
7.0
6.5
Ic =10A
6.0
5.5
5.0
Ic = 5A
4.5
4.0
20
40
60
80
100
120
140
Tc [℃]
Fig 4. Saturation Voltage vs.
Case Temperature
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Pdm
t1
t2
single pulse
0.01
1E-5
1E-4
1E-3
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 6. Transient Thermal Impedance
of IGBT Junction to Case
SGS5N150UF Rev. B