SGS5N150UF Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – General Description

SGS5N150UF
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
SGS5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 4.7 V @ I_C = 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
GC E
TO-220F
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
SGS5N150UF
1500
± 20
10
5
20
50
20
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Typ.
--
--
Max.
2.5
62.5
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B