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SGP40N60UF Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Ultra-Fast IGBT
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160
Common Emitter
T = 25℃
C
120
80
40
20V
15V
12V
VGE = 10V
0
0
2
4
6
8
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
4
Common Emitter
V = 15V
GE
3
2
1
40A
20A
IC = 10A
0
0
30
60
90
120
150
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
TC = 25℃
16
12
8
40A
4
20A
IC = 10A
0
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
80
Common Emitter
70
V = 15V
GE
TC = 25℃
60 TC = 125℃
50
40
30
20
10
0
0.5
1
10
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage
Characteristics
30
V = 300V
CC
Load Current : peak of square wave
25
20
15
10
5 Duty cycle : 50%
T = 100℃
C
Power Dissipation = 32W
0
0.1
1
10
100
Frequency [KHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T = 125℃
C
16
12
8
40A
4
20A
IC = 10A
0
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
SGP40N60UF Rev. A1
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