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SGP40N60UF Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Ultra-Fast IGBT
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 20A,
VGE = 15V
Measured 5mm from PKG
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
3.5
4.5
6.5
V
--
2.1 2.6
V
--
2.6
--
V
-- 1430 --
pF
--
170
--
pF
--
50
--
pF
--
15
--
ns
--
30
--
ns
--
65 130
ns
--
50 150
ns
--
160
--
uJ
--
200
--
uJ
--
360 600
uJ
--
30
--
ns
--
37
--
ns
--
110 200
ns
--
144 250
ns
--
310
--
uJ
--
430
--
uJ
--
740 1200 uJ
--
97 150 nC
--
20
30
nC
--
25
40
nC
--
7.5
--
nH
©2002 Fairchild Semiconductor Corporation
SGP40N60UF Rev. A1
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