SFWI9Z24 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V_GS
Top : - 15 V
- 10 V
- 8.0 V
10¹
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5V
10⁰
10^-1
10^-1
@ Notes :
1. 250 µs Pulse Test
2. T_C = 25 ^oC
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.40
0.35
0.30
V_GS = -10 V
0.25
0.20
0.15
V_GS = -20 V _{@ Note : TJ = 25 oC}
0.10
0
5 10 15 20 25 30 35 40
-I_D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
800
600
C _iss
C_iss= C_gs+ C_gd ( C_ds= shorted )
C_oss= C_ds+ C_gd
C_rss= C_gd
C _oss
400
200
C _rss
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
SFW/I9Z24
Fig 2. Transfer Characteristics
10¹
175 ^oC
10⁰
25 ^oC
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V_DS = -30 V
3. 250 µs Pulse Test
10^-1
2
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
175 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
10^-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
10
V_DS = -12 V
V_DS = -30 V
V_DS = -48 V
5
@ Notes : I_D =-9.7 A
0
0
4
8
12
16
Q_G , Total Gate Charge [nC]