SFWI9Z24 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SFW/I9Z24
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175^oC Operating Temperature
n Lower Leakage Current : 10 µA (Max.) @ V_DS = -60V
n Low R_DS(ON) : 0.206 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC)
Continuous Drain Current (T_C=100^oC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_A=25^oC) ^*
Total Power Dissipation (T_C=25^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BV_DSS = -60 V
R_DS(on) = 0.28^Ω
I_D = -9.7 A
D²-PAK I²-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Value
-60
-9.7
-6.8
-40
±30
161
-9.7
4.9
-5.5
3.8
49
0.33
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/^oC
o_C
Thermal Resistance
Symbol
Characteristic
Typ.
R_θJC
Junction-to-Case
--
R_θJA
Junction-to-Ambient *
--
R_θJA
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.06
40
62.5
Units
o_C/W
Rev. C