RMWB24001 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – 24 GHz Buffer Amplifier MMIC

0.000.11
1.50
1.38
0.48
1.77 2.02
2.38 2.50
1.38
0.715
0.56
0.405
0.975
0.82
0.665
0.12
0.00
0.00 0.11
1.14
2.38 2.50
Dimensions in millimeters
Figure 2. Chip Layout and Bond Pad Locations
Chip Size is 2.50mm x 1.50mm X 100µm. Back of chip is RF and DC Ground.
Drain Supply
V_d=4 V
Bond Wires
100 pF
MMIC Chip
RF IN
10,000 pF
Output Power
Detector Voltage V_det
3 kΩ
100 pF
100 pF
Bond Wires
RF OUT
Bond Wires
100 pF
10,000 pF
Ground
(Back of Chip)
Note:
Gate Supply V_g
Detector delivers > 0.1 V DC into 3 kΩ load resistor for > +17 dBm output power. If output power level detection is not desired, do
not connect to detector bond pad.
Figure 3. Recommended Application Schematic Circuit Diagram
©2004 Fairchild Semiconductor Corporation
RMWB24001 Rev. D