RMWB24001 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 24 GHz Buffer Amplifier MMIC

June 2004
RMWB24001
24 GHz Buffer Amplifier MMIC
General Description
The RMWB24001 is a 3-stage GaAs MMIC amplifier
designed as an 17 to 24 GHz Buffer Amplifier for use in
point to point and point to multi-point radios, and various
communications applications. In conjunction with other
amplifiers, multipliers and mixers it forms part of a complete
23 and 26 GHz transmit/receive chipset. The RMWB24001
utilizes our 0.25µm power PHEMT process and is
sufficiently versatile to serve in a variety of medium power
amplifier applications.
Features
• 4 mil Substrate
• Small-signal Gain 25dB (typ.)
• Saturated Power Out 17dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.5mm x 1.5mm x 100µm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_STG
R _JC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
110
+11
-30 to +85
-55 to +125
148
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWB24001 Rev. D