RFP70N03 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves
300
CASE TEMPERATURE (T_C) = +25^oC
100
100µs
1ms
OPERATION IN THIS
AREA MAY BE
10 _{LIMITED BY rDS(ON)}
V_DSS
MAX = 30V
1
1
10
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
10ms
100ms
DC
50
FIGURE 1. SAFE-OPERATING AREA CURVE
300
I_DM
STARTING T_J = +25^oC
STARTING T_J = +150^oC
100
If R = 0
t_AV = (L) (I_AS)/(1.3 x RATED BV_DSS - V_DD)
If R ≠ 0
10 ^{tAV = (L/R) ln [(IAS x R)/(1.3 x RATED BVDSS - VDD) +1]}
0.01
0.10
1.0
t_AV , TIME IN AVALANCHE (ms)
10.0
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 4. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
200 _{VGS = 10V}
160
PULSE DURATION = 250µs, T_C = +25^oC
V_GS = 8V
V_GS = 7V
120
80
40
0
0.0
V_GS = 6V
V_GS = 5V
V_GS = 4V
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
200
PULSE TEST
PULSE DURATION = 250µs
160 ^{DUTY CYCLE = 0.5% MAX}
120
80
V_DD = 15V
-55^oC
+25^oC
+175^oC
40
0
0.0
2.0
4.0
6.0
8.0
10.0
V_GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
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