RFP70N03 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

SEMICONDUCTOR
RFP70N03, RF1S70N03,
RF1S70N03SM
December 1995
70A, 30V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 70A, 30V
• r_DS(ON) = 0.010Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175^oC Operating Temperature
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Chan-
nel power MOSFETs are manufactured using the MegaFET
process. This process, which uses feature sizes approach-
ing those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03
TO-262AA
F1S70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S70N03SM9A.
Packages
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
M
A
GATE
SOURCE
DRAIN
(FLANGE)
Symbol
D
G
Formerly developmental type TA49025.
S
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DSS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Power Dissipation
T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Above T_C = +25^oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
RFP70N03, RF1S70N03,
RF1S70N03SM
30
30
±20
70
200
(Refer to UIS Curve)
150
1.0
-55 to +175
UNITS
V
V
V
A
A
W
W/^oC
o_C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
3-45
File Number 3404.2