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| RFD3055SM9A Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs | |||
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RFD3055, RFD3055SM, RFP3055
Typical Performance Curves Unless Otherwise Speciï¬ed
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
50
10
100µs
OPERATION IN THIS
AREA MAY BE
1
LIMITED BY rDS(ON)
1ms
10ms
DC
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
200
TC = 25oC
100
VGS = 20V
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I = I25* 1---7---5-1---5-â--0--T----C--
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-3 10-2 10-1
100
101
102
103
104
t, PULSE WIDTH (ms)
FIGURE 5. PEAK CURRENT CAPABILITY
RFD3055, RFD3055SM, RFP3055 Rev. B
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