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RFD3055SM9A Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs | |||
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RFD3055, RFD3055SM, RFP3055
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
RFD3055, RFD3055SM, RFP3055
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20Kâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
60
60
±20
12
Refer to Peak Current Curve
Refer to UIS Curve
53
0.357
-55 to 175
300
260
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t ON
t d(ON)
tr
t d(OFF)
tf
t OFF
Q g(TOT)
Q g(10)
Q g(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = Rated BVDSS, VGS = 0V
TC = 125oC, VDS = 0.8 x Rated BVDSS
VGS = ±20V
ID = 12A, VGS = 10V (Figure 9) (Note 2)
VDD = 30V, ID = 12A
RL = 2.5â¦, VGS = +10V
RG = 10â¦
(Figure 13)
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 48V,ID = 12A,
RL = 4â¦,
Ig(REF) = 0.24mA
(Figure 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C ISS
C OSS
C RSS
RθJC
R θ JA
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 12)
TO-251 and TO-252
TO-220
MIN TYP MAX UNITS
60
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
100
nA
-
-
0.150
â¦
-
-
40
ns
-
7
-
ns
-
21
-
ns
-
16
-
ns
-
10
-
ns
-
-
40
ns
-
19
23
nC
-
10
12
nC
-
0.6
0.8
nC
-
300
-
pF
-
100
-
pF
-
30
-
pF
-
-
2.8
oC/W
-
-
100
oC/W
-
-
62.5
oC/W
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
V SD
ISD = 12A
-
-
1.5
V
Reverse Recovery Time
t rr
ISD = 12A, dISD/dt = 100A/µs
-
-
100
ns
NOTES:
2. Pulse Test: Pulse Width ⤠300ms, Duty Cycle ⤠2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev. B
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