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RFD14N05SM Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
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RFD14N05, RFD14N05SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
16
12
8
4
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.0110-5
10-4
PDM
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
TJ = MAX RATED
SINGLE PULSE
TC = 25oC
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
1
DC
100ms
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2004 Fairchild Semiconductor Corporation
FOR TEMPERATURES
VGS = 20V
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100
VGS = 10V

I
=
I25


-1--7---5-1---5-–--0--T----C--
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
RFD14N05, RFD14N05SM Rev. C
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