RFD14N05SM Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

RFD14N05, RFD14N05SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . .
Derate above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFD14N05, RFD14N05SM
50
50
±20
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BV_DSS I_D = 250µA, V_GS = 0V (Figure 9)
50
V_GS(TH) V_GS = V_DS, I_D = 250µA
2
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 150^oC -
I_GSS V_GS = ±20V
-
r_DS(ON) I_D = 14A, V_GS = 10V, (Figure 11)
-
t_ON V_DD = 25V, I_D ≈ 14A, V_GS = 10V,
-
t_d(ON)
R_GS = 25Ω, R_L = 1.7Ω
(Figure 13)
-
t_r
-
t_d(OFF)
-
t_f
-
t_OFF
-
Q_g(TOT)
Q_g(10)
Q_g(TH)
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 40V, I_D = 14A,
-
R_L = 2.86Ω
-
I_g(REF) = 0.4mA
(Figure 13)
-
Input Capacitance
Output Capacitance
C_ISS V_DS = 25V, V_GS = 0V, f = 1MHz
-
C_OSS ^{(Figure 12)}
-
Reverse Transfer Capacitance
C_RSS
-
Thermal Resistance Junction to Case
R_θJC
-
Thermal Resistance Junction to Ambient
R_θJA
-
TYP
-
-
-
-
-
-
-
14
26
45
17
-
-
-
-
570
185
50
-
-
MAX
-
4
25
250
±100
0.100
60
-
-
-
-
100
40
25
1.5
-
-
-
3.125
100
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o_C/W
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTES:
V_SD I_SD = 14A
t_rr
I_SD = 14A, dI_SD/dt = 100A/µs
-
-
1.5
V
-
-
125
ns
2. Pulse Test: Pulse Width ≤300ms, Duty Cycle ≤2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2004 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM Rev. C