MOC3063M Datasheet, PDF(3/11 Page) Fairchild Semiconductor – The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.

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MOC3063M Datasheet, PDF (3/11 Pages) Fairchild Semiconductor – The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.

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Electrical Characteristics (TA = 25Â°C Unless otherwise speciï¬ed)

Individual Component Characteristics

Symbol

Parameters

Test Conditions

Device

EMITTER

VF Input Forward Voltage

Reverse Leakage Current

DETECTOR

IDRM1 Peak Blocking Current,

Either Direction

dv/dt Critical Rate of Rise of

Off-State Voltage

IF = 30mA

All

VR = 6V

All

VDRM = 600V, IF = 0(2)

IF = 0 (Figure 9)(3)

MOC316XM

MOC306XM

MOC316XM

Min.

600

1000

Typ.*

1.3

0.005

1500

Max.

1.5

100

500

Units

ÂµA

V/Âµs

Transfer Characteristics

Symbol DC Characteristics

IFT

LED Trigger Current

(rated IFT)

VTM Peak On-State Voltage,

Either Direction

Holding Current,

Either Direction

Test Conditions

Main Terminal

Voltage = 3V(3)

ITM = 100 mA peak,

IF = rated IFT

Device

MOC3061M

MOC3062M/

MOC3162M

MOC3063M/

MOC3163M

All

Min. Typ.* Max. Units

15 mA

1.8

All

500

ÂµA

Zero Crossing Characteristics

Symbol

Characteristics

Test Conditions

VINH

Inhibit Voltage (MT1-MT2 IF = Rated IFT

voltage above which device

will not trigger)

IDRM2

Leakage in Inhibited State IF = Rated IFT,

VDRM = 600V,

off state

Device

MOC3061M/2M/3M

MOC3162M/3M

Min.

Typ.*

Max.

Units

Isolation Characteristics

Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units

VISO Isolation Voltage

f = 60 Hz, t = 1 sec

All

7500

*Typical values at TA = 25Â°C

Notes:

2. Test voltage must be applied within dv/dt rating.

3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating

IF lies between max IFT (15mA for MOC3061M, 10mA for MOC3062M & MOC3162M, 5mA for MOC3063M &

MOC3163M) and absolute max IF (60mA).

4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.

MOC306XM, MOC316XM Rev. 1.0.4

www.fairchildsemi.com

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