MOC3063M Datasheet, PDF (2/11 Pages) Fairchild Semiconductor – The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.

Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
TOTAL DEVICE
T_STG
T_OPR
T_SOL
T_J
V_ISO
P_D
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature Range
Isolation Surge Voltage⁽¹⁾
(peak AC voltage, 60Hz, 1 sec. duration)
Total Device Power Dissipation @ 25°C Ambient
Derate above 25°C
EMITTER
I_F
Continuous Forward Current
V_R
Reverse Voltage
P_D
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
DETECTOR
V _DRM
I_TSM
Off-State Output Terminal Voltage
Peak Repetitive Surge Current
(PW = 100µs, 120pps)
P_D
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
Device
All
All
All
All
All
All
All
All
All
All
All
All
Value
Units
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
°C
°C
°C
°C
Vac(pk)
250
mW
2.94
mW/°C
60
mA
6
V
120
mW
1.41
mW/°C
600
V
1
A
150
mW
1.76
mW/°C
Note:
1. Isolation surge voltage, V_ISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.0.4
2
www.fairchildsemi.com