MMBTA92 Datasheet, PDF (3/14 Pages) NXP Semiconductors – PNP high-voltage transistor

Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.9
0.8
- 40 °C
0.7
25 °C
0.6
125 °C
0.5
0.4
β = 10
0.3
1
10
100
I _C - COLLE CTOR CURRENT ( mA)
Collector-Cutoff Current
vs Ambient Temperature
10 0
V_{C B}= 150V
10
1
0.1
25
50
75
10 0
125
150
T A - AMBIENT TE MPERATURE (_°C)
PNP High Voltage Amplifier
(continued)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1
- 40 °C
25 °C
125 °C
V_CE = 5V
10
100
I _C - COLLECTOR CURRENT (mA)
Junction Capacitance
vs Reverse Bias Voltage
10
f = 1.0 MHz
C _ib
1
C _ob
0.1
0.1
1
10
100
V _R - REVERSE VOLTAGE (V)
Gain Bandwidth Product
vs Collector Current
100
V_CE = 50V
80
V_CE = 15V
60
40
20
0
1
10
20
50
100
I _C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
0.75 _TO-92
SOT-223
0.5
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE ( ^oC)