MMBTA92 Datasheet, PDF (1/14 Pages) NXP Semiconductors – PNP high-voltage transistor

MPSA92
MMBTA92
PZTA92
C
BE
TO-92
C
SOT-23
Mark: 2D
E
B
C
SOT-223
E
C
B
PNP High Voltage Amplifier
This device is designed for high voltage driver applications.
Sourced from Process 76.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
300
VCBO
Collector-Base Voltage
300
VEBO
Emitter-Base Voltage
5.0
IC
Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
MPSA92
625
5.0
83.3
200
Max
*MMBTA92
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
**PZTA92
1,000
8.0
125
Units
mW
mW /°C
°C/W
°C/W
 1997 Fairchild Semiconductor Corporation