MMBT100A Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – PN100/PN100A/MMBT100/MMBT100A

Typical Characteristics
400
125 °C
300
25 °C
200
- 40 °C
100
Vce = 5V
0
10
20 30 50
100
200 300 500
I C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
0.4
β = 10^β
0.3
0.2
0.1
25 °C
125 °C
- 40 °C
1
10
100
400
I _C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
- 40 °C
0.8
0.6
0.4
0.2
0.1
25 °C
125 °C
β
β
β
β = 10
1
10
100 300
I _C - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
1
0.8
- 40 °C
0.6
25 °C
125 °C
0.4
V _CE = 5V
0.2
1
10
100
500
I _C - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage
vs Collector Current
10
V_CB = 60V
1
100
f = 1.0 MHz
10
Cib
Cob
1
0.1
25
50
75
100
125
150
TA - AMBIE NT TEMP ERATURE (_°C)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
0.1
0.1
1
10
100
V_ce- COLLECTOR VOLTAGE (V)
Figure 6. Input and Output Capacitance
vs Reverse Voltag
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002