MMBT100A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – PN100/PN100A/MMBT100/MMBT100A

PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier
applications at collector currents to 300mA.
• Sourced from process 10.
3
1
TO-92
1. Emitter 2. Base 3. Collector
2
1 ^SOT-23
Mark: N1/N1A
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* T_C=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector current
- Continuous
T_J, T_stg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
45
75
6.0
500
-55 ~ +150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Max. Units
Off Characteristics
BV_CBO
Collector-Base Breakdown Voltage
BV_CEO
Collector-Emitter Breakdown Voltage *
BV_EBO
Emitter-Base Breakdown Voltage
I_CBO
Emitter Cutoff Current
I_CES
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics
I_C = 10µA, I_B = 0
I_C = 1mA, I_E = 0
I_C = 10µA, I_C = 0
V_CB = 60V
V_CE = 40V
V_EB = 4V
75
V
45
V
6.0
V
50
nA
50
nA
50
nA
h_FE
DC Current Gain
I_C = 100µA, V_CE = 1.0V
100
80
100A 240
I_C = 10mA, V_CE = 1.0V
100
100 450
100A 300 600
I_C = 100mA, V_CE = 1.0V*
100
I_C = 150mA, V_CE = 5.0V * 100
100 350
100A 100
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
I_C = 10mA, I_B = 1.0mA
I_C = 200mA, I_B = 20mA
I_C = 10mA, I_B = 1.0mA
I_C = 200mA, I_B = 20mA
0.2
V
0.4
V
0.85 V
1.0
V
f_T
C_obo
NF
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CE = 20V, I_C = 20mA
V_CB = 5.0V, f = 1.0MHz
I_C = 100µA, V_CE = 5.0V
R_G = 2.0kΩ, f = 1.0KHz
250
100
100A
MHz
4.5 pF
5.0 dB
4.0 dB
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002