MMBFJ110_11 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – N-Channel Switch

Typical Performance Characteristics (Continued)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
10
T_A = 25°캜C
8
V_DD = 1.5V
V _GS(off)= - 12V
6
I _D = 30 mA
4
I _D = 10 mA
2
0
0
-2
-4
-6
-8
-10
VG_GS_S(₍o_of_ff_f)₎ - GATE-SOURCE CUTOFF VOLTAGE (V)
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
On Resistance vs Drain Current
100
50
V _GS = 0
V _GS(off)= - 3.0V
125°캜C
10
125°캜C
5
25°캜C
25캜°C
- 55°캜C
V _GS(off)= - 5.0V
1
1
10
100
I _D - DRAIN CURRENT (mA)
Figure 9. On Resistance vs Drain Current
Switching Turn-On Time
vs Drain Current
50
40
V _GS(off) = - 8.5V
30
20
T_A = 25캜°C
V_GS(off) = - 5.5V
V _GS(off) = - 3.5V
10 ^VDD ^{= 1.5V}
V _GS(off)= - 12V
0
0
5
10
15
20
25
I _D - DRAIN CURRENT (mA)
Figure 8. Switching Turn-On Time vs Drain Current
Output Conductance
vs Drain Current
100
V _DG = 5.0V
10V
V_GS(off) ^5.0V
15V
20V
- 4.0V
10V
5.0V
10
15V
10V
20V
- 2.0V
15V
20V
T
A
=
25캜
°C
- 1.0V
1
0.1
f = 1.0 kHz
1
10
I _D - DRAIN CURRENT (mA)
Figure 10. Output Conductance vs Drain Current
Transconductance
vs Drain Current
100
T_A = 25캜°C
V_DG = 10V
f = 1.0 kHz
T_A = - 55°캜C
T _A = 25캜°C
T_A = 125캜°C
10
1
0.1
V _GS(off) = - 1.0V
V_GS(off) = - 3.0V
V _GS(off) = - 5.0V
1
10
I _D - DRAIN CURRENT (mA)
Figure 11. Transconductance vs Drain Current
700
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, T [oC]
a
Figure 12. Power Dissipation vs Ambient Temperature
© 2011 Fairchild Semiconductor Corporation
MMBFJ110 Rev. A0
3
www.fairchildsemi.com