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MMBFJ110_11 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel Switch
MMBFJ110
N-Channel Switch
Features
• This device is designed for digital switching applications
where very low on resistance is mandatory.
• Sourced from process 58.
April 2011
SuperSOT-3
3
2
Marking : 110
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG Drain-Gate Voltage
25
V
VGS Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
TJ
Junction Temperature
150
°C
TSTG Storage Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
* Device mounted on a minimum pad.
Value
460
3.68
270
Units
mW
mW/°C
°C/W
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off) Gate-Source Cutoff Voltage
On Characteristics
IG = -10μA, VDS = 0
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 100°C
VDS = 15V, ID = 10nA
IDSS Zero-Gate Voltage Drain Current* VDS = 15V, IGS = 0
rDS(on) Drain-Source On Resistance
VDS ≤ 0.1V, VGS = 0
Small Signal Characteristics
Cdg(on) Drain-Gate &Source-Gate On
Csg(off) Capacitance
VDS = 0, VGS = 0, f = 1.0MHz
Cdg(off) Drain-Gate Off Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
Csg(off) Source-Gate Off Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Min.
-25
-0.5
10
Max. Units
V
-3.0
nA
-200
nA
-4.0
V
mA
18
Ω
85
pF
15
pF
15
pF
© 2011 Fairchild Semiconductor Corporation
MMBFJ110 Rev. A0
1
www.fairchildsemi.com
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