J174 Datasheet, PDF (3/5 Pages) NXP Semiconductors – P-channel silicon field-effect transistors

Typical Characteristics (continued)
Transfer Characteristics
-32
V _DS = - 15 V
V_GS(off) = - 4.5 V
-24
- 55°C
25°C
125°C
-16
V_GS(off) = 2.5 V
- 55°C
25°C
125°C
-8
0
0
1
2
3
4
V_GS - GATE-SOURCE VOLTAGE (V)
P-Channel Switch
(continued)
Transfer Characteristics
16
V _DS = - 15 V
V_GS(off) = - 4.5 V
- 55°C
12
25°C
125°C
V_GS(off) = 2.5 V
8
- 55°C
25°C
125°C
4
0
0
1
2
3
4
V_GS - GATE-SOURCE VOLTAGE (V)
Normalized Drain Resistance
vs Bias Voltage
100
50
V_GS(off) @ 5.0V, 10 µA
r DS
20
r _DS =
1
-___V_^G_S___
10
V _GS(off)
5
2
1
0
0.2
0.4
0.6
0.8
1
V_GS /V_GS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
1000
100
10
Output Conductance
vs Drain Current
f = 1.0 kHz
V _GS(off) = - 4.5V
-5.0V -5.0V
-10V
-20V
-10V
-20V
V _GS(off) = - 2.5V
_
1
0.01
_ _0.1
_₁
_ ₁₀
I _D - DRAIN CURRENT (mA)
Transconductance
vs Drain Current
10
V_GS(off) = 2.5V
5
25°C
V _GS(off) = 6.0V
- 55°C
1
25°C
125°C
0.5
V _DG = -15V
f = 1.0 kHz
0_{_}.10.1
_₁
_ ₁₀
I _D - DRAIN CURRENT (mA)
_ ₁₀₀
Capacitance vs Voltage
100
f = 0.1 - 1.0 MHz
10
C _is (V _DS = -15V)
5
C _rs (V_DS = -15V)
1
0
4
8
12
16
20
V GS - GATE-SOURCE VOLTAGE (V)