J174 Datasheet, PDF (2/5 Pages) NXP Semiconductors – P-channel silicon field-effect transistors

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
P-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
B_(BR)GSS
Gate-Source Breakdown Voltage
I_GSS
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
I_DSS
Zero-Gate Voltage Drain Current*
r_DS(on)
Drain-Source On Resistance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
I_G = 1.0 µA, V_DS = 0
30
V
V_GS = 20 V, V_DS = 0
1.0
nA
V_DS = - 15 V, I_D = - 10 nA J174
5.0
10
V
J175
3.0
6.0
V
J176
1.0
4.0
V
J177
0.8
2.5
V
V_DS = - 15 V, I_GS = 0
V_DS ≤ 0.1 V, V_GS = 0
J174 - 20
- 100
mA
J175 - 7.0
- 60
mA
J176 - 2.0
- 25
mA
J177 - 1.5
- 20
mA
J174
J175
J176
J177
85
Ω
125
Ω
250
Ω
300
Ω
Typical Characteristics
Common Drain-Source
-20
T A= 25°C
TYP V _GS(off) = 4.5 V
-16
0.5 V
V _GS = 0 V
-12
1.0 V
1.5 V
-8
2.0 V
-4
2.5 V ^{3.0 V 3.5 V}
0
0
-1
-2
-3
-4
-5
V_DS - DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
100
1,000
50
500
I _DSS
r _DS
g _fs
10
100
5
50
I DSS , g fs @ VDS = 15V,
V GS = 0 PULSED
r DS @ -100 mV, V_GS = 0
V GS(off) @ V _DS = - 15V,
I _D = - 1.0 µA
1
10
1
2
5
10
V_{GS (OFF)} - GATE CUTOFF VOLTAGE (V)