IRLWI640A Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

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Fig 1. Output Characteristics
V
GS
Top : 7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10¹
4.0 V
3.5 V
Bottom : 3.0 V
10⁰
10^-1
@ Notes :
1. 250 µs Pulse Test
2. T = 25 ^oC
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Fig 3. On-Resistance vs. Drain Current
0.4
0.3
V =5V
GS
0.2
0.1
V = 10 V
GS
@ Note : T = 25 ^oC
J
0.0
0
20
40
60
80
I , Drain Current [A]
D
Fig 5. Capacitance vs. Drain-Source Voltage
2000
C _iss
1600
C_iss= C_gs+ C_gd ( C_ds= shorted )
C_oss= C_ds+ C_gd
C_rss= C_gd
1200
800
C _oss
400
C _rss
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
V_DS , Drain-Source Voltage [V]
IRLW/I640A
Fig 2. Transfer Characteristics
10¹
150 ^oC
10⁰
25 ^oC
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V_DS = 40 V
3. 250 µs Pulse Test
10^-1
0
2
4
6
8
10
V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
150 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
10^-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
6
V_DS = 40 V
V_DS = 100 V
V_DS = 160 V
4
2
@ Notes : I_D = 18 A
0
0
10
20
30
40
Q_G , Total Gate Charge [nC]
3