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IRLWI640A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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$GYDQFHG 3RZHU 026)(7
IRLW/I640A
FEATURES
⦠Avalanche Rugged Technology
⦠Rugged Gate Oxide Technology
⦠Lower Input Capacitance
⦠Improved Gate Charge
⦠Extended Safe Operating Area
⦠150°C Operating Temperature
⦠Lower Leakage Current: 10µA (Max.) @ VDS = 200V
⦠Lower RDS(ON): 0.145⦠(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 200 V
RDS(on) = 0.18â¦
ID = 18 A
D2-PAK I2-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Value
200
18
11.4
63
±20
64
18
11
5
3.1
110
0.88
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.14
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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