IRFR110A Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V_GS
10^{1 Top :}
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10^-1
@ Notes :
1. 250 µs Pulse Test
2. T = 25 ^oC
C
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.8
0.6
V_GS = 10 V
0.4
0.2
V_GS = 20 V
@ Note : T_J = 25 ^oC
0.0
0
5
10
15
20
I_D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
350
280
C _iss
C_iss= C_gs+ C_gd ( C_ds= shorted )
C_oss= C_ds+ C_gd
C_rss= C_gd
210
C _oss
140
C _rss
70
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
V_DS , Drain-Source Voltage [V]
IRFR/U110A
Fig 2. Transfer Characteristics
10¹
150 ^oC
10⁰
25 ^oC
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
10^-1
2
4
6
8
10
V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
150 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
10^-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
V_DS = 20 V
10
V_DS = 50 V
V_DS = 80 V
5
@ Notes : I_D = 5.6 A
0
0
2
4
6
8
10
Q_G , Total Gate Charge [nC]