IRFR110A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

IRFR/U110A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T_C=25^ΟC unless otherwise specified)
Symbol
BV_DSS
∆ BV/∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- --
-- 0.12 --
2.0 -- 4.0
V
V/ ^ΟC
V
V_GS=0V,I_D=250 ^µA
I_D=250^µ A See Fig 7
V_DS=5V,I_D=250 ^µ A
-- -- 100 _nA ^VGS^=20V
-- -- -100
V_GS=-20V
-- -- 10
V_DS=100V
--
-- 100 ^{µ A V}DS^=80V,TC^=125ΟC
-- -- 0.4 Ω V_GS=10V,I_D=2.35A O⁴
-- 3.23 -- Ω V_DS=40V,I_D=2.35A _O4
-- 190 240
--
55
65
V_GS=0V,V_DS=25V,f =1MHz
pF
See Fig 5
-- 21 25
-- 10 30
-- 14 40
V_DD=50V,I_D=5.6A,
-- 28 70 ^{ns RG=24Ω}
See Fig 13
O⁴ O⁵
-- 18 50
-- 8.5 12
V_DS=80V,V_GS=10V,
-- 1.6 -- nC I_D=5.6A
-- 4.1 --
See Fig 6 & Fig 12 O⁴ O⁵
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O¹ --
-- 4.7
Integral reverse pn-diode
A
-- 19
in the MOSFET
O⁴ -- -- 1.5 V T_J=25^ΟC ,I_S=4.7A,V_GS=0V
-- 85 -- ns T_J=25^ΟC ,I_F=5.6A
-- 0.23 -- ^µ C di_F/dt=100A/ µ s
O⁴
Notes ;
O^{1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature}
O^{2 L=4mH, I}AS^{=4.7A, V}DD^{=25V, R}G^{=27Ω , Starting T}J ^=25oC
O^{3 I}SD ^{<_ 5.6A, di/dt <_250A/ µs, V} DD ^{<_ BV}DSS ^{, Starting T}J ^{=25 oC}
O^{4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%}
O^{5 Essentially Independent of Operating Temperature}