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| H11F1 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – PHOTO FET OPTOCOUPLERS | |||
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PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ISOLATION CHARACTERISTICS
Parameter
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 min.
VI-O = 500 VDC
VI-O = 0, f = 1.0 MHz
Symbol
VISO
RISO
CISO
Min
5300
1011
Typ*
Max
Units
Vac (rms)
â¦
2
pF
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise speciï¬ed.)
DC Characteristics
Test Conditions
Symbol
Device
On-State Resistance
IF = 16 mA, I4-6 = 100 µA
R4-6
On-State Resistance
IF = 16 mA, I6-4 = 100 µA
R6-4
Resistance, non-linearity
and assymetry
IF = 16mA, I4-6 = 25 µA RMS,
f = 1kHz
H11F1
H11F2
H11F3
H11F1
H11F2
H11F3
All
AC Characteristics
Turn-On Time
Turn-Off Time
Test Conditions
RL = 50â¦, IF = 16mA, V4-6 = 5V
RL = 50â¦, IF = 16mA, V4-6 = 5V
Symbol
ton
toff
Device
All
All
Min Typ* Max Units
200
330 â¦
470
200
330 â¦
470
0.1
%
Min Typ* Max Units
25
µS
25
µS
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
6/24/02
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