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| H11AG1SM Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – Phototransistor Optocoupler | |||
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Electrical Characteristics (TA = 25°C unless otherwise speciï¬ed.)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
EMITTER
VF
Input Forward Voltage
IF = 1mA
IR
Reverse Leakage Current
VR = 5V, TA = 25°C
CJ
Capacitance
V = 0, f = 1.0MHz
DETECTOR
BVCEO Breakdown Voltage, Collector to Emitter IC = 1.0mA, IF = 0
BVCBO Collector to Base
IC = 100µA, IF = 0
BVECO Emitter to Collector
IC = 100µA, IF = 0
ICEO Leakage Current, Collector to Emitter VCE = 10V, IF = 0
CCE Capacitance
VCE = 10V, f = 1MHz
*Typical values at TA = 25°C.
Min. Typ.* Max. Units
1.25 1.5
V
10
µA
100
pF
30
V
70
V
7
V
5
10
µA
10
pF
Isolation Characteristics
Symbol
Parameter
VISO
RISO
Input-Output Isolation Voltage
Isolation Resistance
Test Conditions
f = 60Hz, t = 1 sec.
VI-O = 500VDC, TA = 25°C
Min.
7500
1011
Typ.*
Max.
Units
VACPEAK
â¦
Transfer Characteristics (TA = 25°C Unless otherwise speciï¬ed.)
Symbol
Characteristics
Test Conditions
DC CHARACTERISTICS
CTR Current Transfer Ratio
VCE(SAT) Saturation Voltage
AC CHARACTERISTICS
IF = 1mA, VCE = 5V
IF = 1mA, VCE = 0.6V
IF = 0.2mA, VCE = 1.5V
IF = 2.0mA, IC = 0.5mA
Non-Saturated Switching Times
ton
Turn-On Time
toff
Turn-Off Time
RL = 100â¦, IF = 1mA, VCC = 5V
RL = 100â¦, IF = 1mA, VCC = 5V
*Typical values at TA = 25°C
Min. Typ.* Max. Units
300
%
100
100
.40
V
5
µs
5
µs
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.3
3
www.fairchildsemi.com
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