H11AG1SM Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Phototransistor Optocoupler

September 2009
H11AG1M
Phototransistor Optocoupler
Features
■ High efficiency low degradation liquid epitaxial IRED
■ Logic level compatible, input and output currents,
with CMOS and LS/TTL
■ High DC current transfer ratio at low input currents
(as low as 200µA)
■ Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ CMOS driven solid state reliability
■ Telephone ring detector
■ Digital logic isolation
Description
The H11AG1M device consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
Schematic
ANODE ¹
CATHODE 2
N/C 3
6 _BASE
5 COL
4 EMITTER
6
6
1
1
6
1
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.3
www.fairchildsemi.com