FQU20N06LTU Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100% Avalanche Tested

Typical Characteristics
V_GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10¹
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
80
V = 5V
GS
V = 10V
GS
60
40
※ Note : T_J = 25℃
20
0
10
20
30
40
50
60
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1000
C_oss
C
iss
500
C
rss
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor Corporation
FQU20N06L Rev. C1
10¹
10⁰ _150℃
10^-1
0
25℃
2
-55℃
※ Notes :
1.
2.
2V5^DS0μ^=s25PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
10
V_DS = 30V
V = 48V
8
DS
6
4
2
※ Note : I_D = 21A
0
0
4
8
12
16
20
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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