FQU20N06LTU Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 100% Avalanche Tested

FQU20N06L
N-Channel QFET^® MOSFET
60 V, 17.2 A, 42 mΩ
July 2013
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor^®’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
G DS
I-PAK
(TO251)
Features
• 17.2 A, 60 V, R_DS(on)=42 mΩ(Max.)@V_GS=10 V, ID=8.6A
• Low Gate Charge (Typ. 9.5 nC)
• Low C_rss (Typ. 35 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
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Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQU20N06L
60
17.2
10.9
68.8
± 20
170
17.2
3.8
7.0
2.5
38
0.30
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θJA
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max. *
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQU20N06L Rev. C1
FQU20N06L
3.28
50
110
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com