FQT7N10TF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.4
1.2
1.0
V_GS = 10V
0.8
V = 20V
GS
0.6
0.4
0.2
※ Note : T_J = 25℃
0.0
0
3
6
9
12
15
18
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
400
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
300
※ Notes :
C
iss
1. V_GS = 0 V
2. f = 1 MHz
C_oss
200
100
C
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
150℃
10⁰
25℃
-55℃
10^-1
2
※ Notes :
1.
2.
V25_DS0μ=
40V
s Pulse
Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
150℃ 25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
10^-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
V = 80V
DS
8
6
4
2
※ Note : I = 7.3 A
D
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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