FQT7N10TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

FQT7N10
N-Channel QFET^® MOSFET
100 V, 1.7 A, 350 mΩ
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor^®’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
March 2013
Features
• 1.7 A, 100 V, RDS(on)=350 mΩ(Max.) @VGS=10 V, ID=0.85 A
• Low Gate Charge (Typ. 5.8 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
D
S
G _SOT-223
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
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FQT7N10
100
1.7
1.36
6.8
± 25
50
1.7
0.2
6.0
2.0
0.016
-55 to +150
300
Typ
Max
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com