FQT5P10TF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – P-Channel QFET® MOSFET -100 V, -1.0 A, 1.05 Ω

Typical Characteristics
V_GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
10⁰
-6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
10^-1
10^-2
10^-1
※ Note :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.5
2.0
V_GS = - 10V
1.5
V_GS = - 20V
1.0
0.5
※ Note : T_J = 25℃
0.0
0
3
6
9
12
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
450
400
350
300
250
200
150
100
50
0
10^-1
C
oss
C
iss
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
10⁰
150℃
10^-1
2
25℃
-55℃
※ Notes :
1.
2.
2V5^D0^Sμ^=s-4P0uVlse
Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = -20V
V_DS = -50V
V = -80V
8
DS
6
4
2
※ Note : I_D = -4.5 A
0
0
1
2
3
4
5
6
7
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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